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RESEARCH PAPERS

Nanomechanical Properties of SiC Films Grown From C60 Precursors Using Atomic Force Microscopy

[+] Author and Article Information
K. Morse, T. P. Weihs, A. V. Hamza, M. Balooch

University of California, Lawrence Livermore National Laboratory, Livermore, CA 94550

Z. Jiang, D. B. Bogy

Department of Mechanical Engineering, University of California, Berkeley, CA 94720

J. Tribol 119(1), 26-30 (Jan 01, 1997) (5 pages) doi:10.1115/1.2832475 History: Received January 01, 1995; Revised July 21, 1995; Online January 24, 2008

Abstract

The mechanical properties of SiC films grown via C60 precursors were determined using atomic force microscopy (AFM). Conventional silicon nitride and diamond-tipped steel AFM cantilevers were employed to determine the film hardness, friction coefficient, and elastic modulus. The hardness is found to be 26 GPa by nanoindentation of the film with a Berkovich diamond tip. The friction coefficient for the silicon nitride tip on the SiC film is about one half to one third that for silicon nitride sliding on a silicon substrate. By combining nanoindentation and AFM measurements an elastic modulus of ~300 GPa is estimated for these SiC films.

Copyright © 1997 by The American Society of Mechanical Engineers
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