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TECHNICAL PAPERS

Analysis of the Tribological Mechanisms Arising in the Chemical Mechanical Polishing of Copper-Film Wafers

[+] Author and Article Information
Jen Fin Lin, Junne Dar Chern, Yang Hui Chang

Department of Mechanical Engineering, National Cheng Kung University, Tainan 701, Taiwan

Ping Lin Kuo, Ming Shih Tsai

National Nano Device Laboratory, Hsinchu 300, Taiwan

J. Tribol 126(1), 185-199 (Jan 13, 2004) (15 pages) doi:10.1115/1.1631010 History: Received September 19, 2002; Revised April 24, 2003; Online January 13, 2004
Copyright © 2004 by ASME
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References

Figures

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Balance of forces at the wafer
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Schematic representation of the compressed asperities of the pad fully covered by one layer of abrasive particles
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Schematic diagram of deformations arising in a spherical contact region
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Distributions of (a) the hydrodynamic pressure and (b) the solid contact pressure in a wafer. These numerical solutions are obtained under the operating conditions: ωcp=35 rpm, down-force pressure: 34.47 kPa, and back pressure: 10.34 kPa.
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Distribution of pad deformations in the wafer region. The operating conditions are shown in Fig. 7.
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Experimental results for the composite hardness of the copper-film wafer plus a passivation layer varying with the indentation depth
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Experimental results for the composite hardness of the copper-film wafer plus a passivation layer varying with the passivation layer thickness
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Experimental results for the Young’s modulus of the copper-film wafer plus a passivation layer varying with the indentation depth
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Variations of the composite hardness versus variations of the Young’s modulus of a copper-film wafer plus a passivation layer
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Variations of the mean al rate of the copper-film wafer with the passivation-layer thickness. Each curve is obtained using six kinds of composite hardnesses (H*).
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Variations of the removal rate in the radial direction under the operating conditions of (a) (ωcp)=(35 rpm, 35 rpm), down-force pressure; 34.47 kPa, (b) (ωcp)=(25 rpm,25 rpm), down-force pressure; 34.47 kPa, (c) (ωcp)=(35 rpm,35 rpm), down-force pressure; 20.68 kPa
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The analytical and experimental results of the removal rate versus the non-uniformity
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The film-thickness measuring points of a 6 in. silicon wafer on a M-gauge
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The schematic representation of a wafer-polishing tool. It shows polish platen with the wafer carrier assembly.
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Schematic representation of the compressed asperities of the pad under the hydrodynamic and solid contact pressures

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