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TECHNICAL PAPERS

Analysis of the Tribological Mechanisms Arising in the Chemical Mechanical Polishing of Copper-Film Wafers

[+] Author and Article Information
Jen Fin Lin, Junne Dar Chern, Yang Hui Chang

Department of Mechanical Engineering, National Cheng Kung University, Tainan 701, Taiwan

Ping Lin Kuo, Ming Shih Tsai

National Nano Device Laboratory, Hsinchu 300, Taiwan

J. Tribol 126(1), 185-199 (Jan 13, 2004) (15 pages) doi:10.1115/1.1631010 History: Received September 19, 2002; Revised April 24, 2003; Online January 13, 2004
Copyright © 2004 by ASME
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References

Preston,  F., 1927, “The Theory and Design of Plate Glass Polishing Machines,” J. Soc. Glass Technol., 11, pp. 214–256.
Yu, T. K., Chris, C., and Lee, M. O., 1994, “Combined Asperity Contact and Fluid Flow Model for Chemical Mechanical Polishing,” IEEE, pp. 29–34.
Runnels,  S. R., and Eyman,  L. M., 1994, “Tribology Analysis of Chemical Mechanical Polishing,” J. Electrochem. Soc., 141, pp. 1698–1701.
Runnels,  S. R., 1994, “Tribology Analysis of Chemical Mechanical Polishing,” J. Electrochem. Soc., 141, pp. 1698–1701.
Wang,  D., Lee,  J., Holland,  K., Bibby,  T., Beaudoin,  S., and Cale,  T., 1999, “Von Mises Stress in Chemical-Mechanical Polishing Process,” J. Electrochem. Soc., 146, pp. 253–255.
Tichy,  J., Levert,  J. A., Shan,  L., and Danyluk,  S., 1999, “Contact Mechanics and Lubrication Hydrodynamics of Chemical Mechanical Polishing,” J. Electrochem. Soc., 146, pp. 1523–1528.
Tseng,  W. T., and Wang,  Y. L., 1997, “Re-Examination of Pressure and Speed Dependence of Removal Rate During Chemical-Mechanical Polishing Processes,” J. Electrochem. Soc., 144, pp. L15–L17.
Pak, K., Park, Y. R., Chung, U. I., Koh, Y. B., and Lee, M. Y., 1997, “A CMP Process Using a Fast Oxide Slurry,” Proc. Second Int. Chemical-Mechemical Planarization for ULSI Multilevel Interconnection Conf., Santa Clara, CA, pp. 299–306.
Xu, R., Smart, G., and Zhang, M., 1999, “Particle Characteristics and Removal Rate in CMP Process,” Proc. Fourth Int. Chemical-Mechanical Planarization for ULSI Multilevel Interconnection Conf., Santa Clara, CA, pp. 253–255.
Moon, Y., Park, I., and Dornfeld, D. A., 1998, “Mechanical Properties and Relationship to Process Performance of the Polishing Pad in Chemical Mechanical Polishing (CMP) of Silicon,” Proc. ASPE Spring Topical Meeting on Silicon Machining, pp. 83–87.
Pohl,  M. C., and Griffiths,  D. A., 1996, “The Importance of Particle Size to the Performance of Abrasive Particles in the CMP Processes,” J. Electron. Mater., 25, pp. 1612–1616.
Jairath,  P., Farhas,  C. K., Huang,  C. K., Stell,  M., and Tzeng,  S., 1994, “Chemical-Mechanical Polishing Process Manufacturability,” Solid State Technol., 37, pp. 71–76.
Levert,  J. A., Baker,  A. R., Mess,  F. M., Salant,  R. F., Danyluk,  S., and Cook,  L., 1998, “Mechanisms of Chemical-Mechanical Polishing of SiO2 Dielectricon Integrated Circuits,” Tribol. Trans., 41, pp. 593–599.
Subramanian,  R. S., Zhang,  L., and Babu,  S. V., 1999, “Transport Phenomena in Chemical Mechanical Polishing,” J. Electrochem. Soc., 146(11), pp. 4263–4272.
Zhao, B., and Shi, F. G., 1999, “Chemical Mechanical Polishing in IC Processes: New Fundamental Insights,” Proc. Second Int. Chemical-Mechanical Planarization for ULSI Multilevel Interconnection Conf., Santa Clara, CA, pp. 13–22.
Shi,  F. G., and Zhao,  B., 1998, “Modeling of Chemical-Mechanical Polishing With Soft Pads,” Appl. Phys. A: Solids Surf., 67, pp. 249–252.
Wu, G., and Cook, L., 1999, “Mechanism of Copper Damascene CMP,” Proc. Third Int. Chemical-Mechanical Planarization for ULSI Multilevel Interconnection Conf., Santa Clara, CA, pp. 13–22.
Liu,  C. W., Dai,  B. T., Tseng,  W. T., and Yeh,  C. F., 1996, “Modeling of the Wear Mechanism During Chemical-Mechanical Polishing,” J. Electrochem. Soc., 143, pp. 715–721.
Luo,  J. F., and Dornfeld,  D. A., 2001, “Material Removal Mechanism in Chemical Mechanical Polishing: Theory and Modeling,” IEEE Trans. Semicond. Manuf., 14, pp. 112–133.
Ali,  I., Roy,  S. R., and Shinn,  G., 1994, “Chemical-Mechanical Polishing of Interlayer Dielectric: A Review,” Solid State Technol., 37, pp. 63–67.
Christensen,  H., 1969–1970, “Stochastic Models for Hydrodynamic Lubrication of Rough Surfaces,” Proc. Inst. Mech. Eng., 184, pp. 1013–1026.
Elrod,  H. G., 1973, “Thin-Film Lubrication Theory for Newtonian Fluids Possessing Straited Roughness of Grooving,” ASME J. Lubr. Technol., 93, pp. 324–330.
Patir,  N., and Cheng,  H. S., 1979, “Application of Average Flow Model to Lubrication Between Rough Sliding Surfaces,” ASME J. Lubr. Technol., 101, pp. 220–230.
Patir, N., 1978, “Effects of Surface Roughness on Partial Film Lubrication Using an Average Flow Model Based on Numerical Simulation,” Ph.D. thesis, Northwestern University, Evanston, IL.
Yu, T. K., Yu, C. C., and Orlowski, M., 1993, “A Statistical Polishing Pad Model for Chemical Mechanical Polishing,” Proc. IEEE Int. Electron Devices Meeting, Washington, DC, pp. 865–868.
Tichy,  J., Levert,  J. A., Shan,  L., and Danyluk,  S., 1999, “Contact Mechanics and Lubrication Hydrodynamics of Chemical Mechanical Polishing,” J. Electrochem. Soc., 146, pp. 1523–1528.
Liang,  H., Kaufman,  F., Sevilla,  R., and Anjur,  S., 1997, “Wear Phenomena in Chemical Mechanical Polishing,” Wear, 211, pp. 271–279.
Gutmann,  R., Steigerwald,  J., You,  L., Price,  D., Neirynck,  J., Duquette,  D., and Murarka,  S., 1995, “Chemical-Mechanical Polishing of Copper With Oxide and Polymer Inter-Level Dielectrics,” Thin Solid Films, 270, pp. 596–600.
Pourbaix, M., 1975, Atlas of Electrochemical Equilibria in Aqueous Solutions, NACE, Houston, TX.
Pourbaix M., 1976, Lectures on Electrochemical Corrosion, Plenum Press, New York.
Hirabayashi, H., Higuchi, M., Kinoshita, M., Hagasaka, H., Mase, K., and Oshima, J., 1996, “The Role of Complexing Agents in the CMP of Copper Thin Films,” Proceedings of the 1st International VMIC Specialty Conference on CMP Planarization, Santa Clara, CA, pp. 119–124.
Timoshenko, S. P., and Goodier, J. N., 1970, Theory of Elasticity, McGraw-Hill, New York.
Greenwood,  J. A., and Williamson,  J. B. P., 1966, “Contact of Nominally Flat Surfaces,” Proc. R. Soc. London, Ser. A, 300, pp. 300–319.
Halling, J., and Nuri, K. A., 1975, Contact of Rough Surfaces of Working-Hardening Materials in the Mechanics of Contact Between Deformable Bodies, De Pater and K. Delft, eds., Cambridge University Press, New York and London.
Chang,  W. R., Etsion,  I., and Bogy,  D. B., 1987, “An Elastic-Plastic Model for the Contact of Rough Surface,” ASME J. Tribol., 109, pp. 257–263.
Taber, D., 1951, The Hardness of Metal, Oxford University Press, Oxford.
Zhang, F., Busnaina, A. A., Feng, J., and Fary, M. A., 1999, “Particle Adhesion Force in CMP and Subsequent Cleaning Processes,” Proc. Fourth Int. Chemical-Mechanical Planarization for ULSI Multilevel Interconnection Conf., Santa Clara, CA, pp. 61–64.
McFarlane,  J. S., and Tabor,  D., 1950, “Relation between Friction and Adhesion,” Proc. R. Soc. London, Ser. A, 202, pp. 244–253.
Burwell,  J. T., and Strang,  C. D., 1952, “Metallic Wear,” Proc. R. Soc. London, Ser. A, 212, pp. 470–477.
Rowe,  C. N., 1966, “Some Aspects of the Heat Adsorption in the Function of a Boundary Lubricant,” ASLE Trans., 9, pp. 101–111.
Shan,  L., Levert,  J., Meade,  L., Tichy,  J., and Danyluk,  S., 2000, “Interfacial Fluid Mechanics and Pressure Prediction in Chemical Mechanical Polishing,” ASME J. Tribol., 122, pp. 539–543.
Levert,  J. A., Danyluk,  S., and Tichy,  J., 2000, “Mechanism for Subambient Interfacial Pressure While Polishing With Liquids,” ASME J. Tribol., 122, pp. 450–457.
Pharr,  G. M., Oliver,  W. C., and Brotzen,  F. R., 1992, “On the Generality of the Relationship Among Contact Stiffness, Contact Area, and Elastic Modulus During Indentation,” Journal of Materials Research, 7(3), pp. 613–617.

Figures

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The film-thickness measuring points of a 6 in. silicon wafer on a M-gauge
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The schematic representation of a wafer-polishing tool. It shows polish platen with the wafer carrier assembly.
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Schematic representation of the compressed asperities of the pad under the hydrodynamic and solid contact pressures
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Balance of forces at the wafer
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Schematic representation of the compressed asperities of the pad fully covered by one layer of abrasive particles
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Schematic diagram of deformations arising in a spherical contact region
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Distributions of (a) the hydrodynamic pressure and (b) the solid contact pressure in a wafer. These numerical solutions are obtained under the operating conditions: ωcp=35 rpm, down-force pressure: 34.47 kPa, and back pressure: 10.34 kPa.
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Distribution of pad deformations in the wafer region. The operating conditions are shown in Fig. 7.
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Experimental results for the composite hardness of the copper-film wafer plus a passivation layer varying with the indentation depth
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Experimental results for the composite hardness of the copper-film wafer plus a passivation layer varying with the passivation layer thickness
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Experimental results for the Young’s modulus of the copper-film wafer plus a passivation layer varying with the indentation depth
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Variations of the composite hardness versus variations of the Young’s modulus of a copper-film wafer plus a passivation layer
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Variations of the mean al rate of the copper-film wafer with the passivation-layer thickness. Each curve is obtained using six kinds of composite hardnesses (H*).
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Variations of the removal rate in the radial direction under the operating conditions of (a) (ωcp)=(35 rpm, 35 rpm), down-force pressure; 34.47 kPa, (b) (ωcp)=(25 rpm,25 rpm), down-force pressure; 34.47 kPa, (c) (ωcp)=(35 rpm,35 rpm), down-force pressure; 20.68 kPa
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The analytical and experimental results of the removal rate versus the non-uniformity

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