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TECHNICAL PAPERS

A Material Removal Rate Model Considering Interfacial Micro-Contact Wear Behavior for Chemical Mechanical Polishing

[+] Author and Article Information
Yeau-Ren Jeng, Pay-Yau Huang

Department of Mechanical Engineering, National Chung Cheng University, 160 San-Hsing, Ming-Hsiung, Chia-Yi 621, Taiwan

J. Tribol 127(1), 190-197 (Feb 07, 2005) (8 pages) doi:10.1115/1.1828068 History: Received December 02, 2003; Revised June 03, 2004; Online February 07, 2005
Copyright © 2005 by ASME
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References

Figures

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Schematic diagram of CMP platform
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Schematic view of real contact area between polishing interfaces
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Schematic view of abrasive particles trapped at the top of the polishing pad asperities
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Effective abrasive particles in the polishing interface
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Comparison of normalized predicted material removal rate with experimental results of Bielmann et al.
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(a) Variation in material removal rate with down force for different average particle sizes. (b) Variation in number of effective particles with average particle size for different magnitudes of applied down force. (c) Variation in separation distance with magnitude of down force for different average particle sizes.
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(a) Variation in material removal rate with magnitude of down force for different values of wafer surface hardness. (b) Variation in number of effective particles with magnitude of down force for different values of wafer surface hardness. (c) Variation in separation distance with magnitude of down force for different values of wafer surface hardness.
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Variation in material removal rate with slurry concentration

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