On the CMP Material Removal at the Molecular Scale

[+] Author and Article Information
L. Chang

Department of Mechanical and Nuclear Engineering, The Pennsylvania State University, University Park, PA 16802

J. Tribol 129(2), 436-437 (Nov 13, 2006) (2 pages) doi:10.1115/1.2647829 History: Received March 08, 2006; Revised November 13, 2006

Understanding of the mechanisms of material removal is of fundamental importance in chemical-mechanical planarization of semiconductor wafers. A plausible mechanism at work is that the material is removed at the molecular scale by debonding the chemistry-weakened molecules at the wafer surface. A sequence of order-of-magnitude calculations is carried out to substantiate this mechanism of chemical-mechanical polishing (CMP) materials removal. The analysis may lend further credence to the mechanism in addition to its underlying theoretical foundation.

Copyright © 2007 by American Society of Mechanical Engineers
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