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TECHNICAL PAPERS

A Deterministic-Chaos Study of Electron Triboemission Outputs

[+] Author and Article Information
G. J. Molina

Department of Mechanical and Electrical Engineering Technology, College of Science and Technology, Georgia Southern University, Statesboro, GA 30460gmolina@georgiasouthern.edu

M. J. Furey

Department of Mechanical Engineering, College of Engineering, Virginia Tech, Blacksburg, VA 24060

C. Kajdas

 Institute for Fuels and Renewable Energy, 31 Zwirki i Wigury Avenue, PL 02-091 Warsaw, Poland

J. Tribol 129(3), 679-683 (Jan 23, 2007) (5 pages) doi:10.1115/1.2736709 History: Received May 03, 2006; Revised January 23, 2007

The authors have carried out extensive measurements of electron triboemission from the scratching of ceramics and semiconductors that are briefly summarized in this paper. Analysis of the frequency-domain distribution of typical triboemission count-pulse outputs suggested that their occurrence is not Poisson’s (e.g., it is not random). This paper presents a study on the hypothesis of deterministic-chaos origin for triboemission data. Electron triboemission outputs from the ceramics alumina, sapphire, silicon nitride, and the semiconductors Si and Ge are analyzed by means of extracting deterministic-chaos metrics. The results suggest that the low-level electron-emission components may be described by multiplicative processes of random initiation, while the superimposed large burst-type components may be of deterministic origin.

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Copyright © 2007 by American Society of Mechanical Engineers
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Figures

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Figure 1

Negatively charged triboemission from diamond cone on alumina sliding contact; acquisition window: 10ms, load: 2N, speed: 0.48cm∕s

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Figure 2

Negatively charged triboemission for alumina ball on alumina disk; acquisition window: 10ms, load: 10N, speed: 0.48cm∕s

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Figure 3

Negatively charged triboemission from diamond cone on Si sliding contact; acquisition window: 10ms, load: 5N, speed: 0.1cm∕s

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Figure 4

Negatively charged triboemission from diamond cone on Ge sliding contact; acquisition window: 10ms, load: 5N, speed: 0.1cm∕s

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Figure 5

Block diagram of the Thomas’ stochastic process; λP= “primary-emission” rate; λS= “secondary-emission” rate, t=time, n=total number of counts

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Figure 6

Semi-logarithmic plot of Shannon spectral entropy values for different triboemission outputs computed in three window lengths

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